PSMN2R8-40BS Datasheet, PDF (10/15 Pages) NXP Semiconductors – N-channel 40 V 2.9 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN2R8-40BS
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
V_GS
(V)
8
6
4
2
0
0
8V
32 V
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V_DS = 20 V
20
40
60 _{QG (nC)} 80
Fig 15. Gate charge waveform definitions
10⁴
C
(pF)
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C_iss
10³
C_oss
C_rss
10²
10^-1
1
10
10²
V_DS (V)
Fig 16. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
80
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60
40
20
0
0
T_j = 175 °C
T_j = 25 °C
0.3
0.6
0.9
1.2
V_SD (V)
Fig 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 18. Source current as a function of source-drain
voltage; typical values
PSMN2R8-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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