PSMN2R8-40BS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 40 V 2.9 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN2R8-40BS
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK
Table 7. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage
I_S = 10 A; V_GS = 0 V; T_j = 25 °C;
see Figure 18
t_rr
reverse recovery time
I_S = 10 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 20 V
Q_r
recovered charge
I_S = 10 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 20 V; T_j = 25 °C
7000
C
(pF)
6000
003aad437
C_iss
5000
C_rss
4000
3000
2000
0
3
6
9
12
V_GS (V)
30
R_DSon
(mΩ)
25
20
15
10
5
0
0
5
Min Typ Max Unit
-
0.85 1.2 V
-
47
-
ns
-
61
-
nC
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10
15
20
V_GS (V)
Fig 5. Input and reverse transfer capacitances as a
Fig 6. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN2R8-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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