PSMN2R8-40BS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 40 V 2.9 m standard level MOSFET in D2PAK

PSMN2R8-40BS
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK
Rev. 1 — 20 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
I_D
Parameter
drain-source voltage
drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
Min
-
[1] _-
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
-
T_j
junction temperature
-55
Static characteristics
R_DSon
drain-source on-state resistance V_GS = 10 V; I_D = 10 A; T_j = 100 °C;
-
see Figure 13; see Figure 14
V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
-
see Figure 14
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
V_GS = 10 V; I_D = 10 A; V_DS = 20 V;
-
see Figure 15; see Figure 16
-
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C;
-
I_D = 100 A; V_sup ≤ 40 V; unclamped;
R_GS = 50 Ω
[1] Continuous current rating is limited by package.
Typ Max Unit
-
40 V
-
100 A
-
211 W
-
175 °C
3.58 4.2 mΩ
2.47 2.9 mΩ
17
-
nC
71 -
nC
-
407 mJ