PSMN1R7-30YL_10 Datasheet, PDF (9/16 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
80
I_D
(A)
60
40
20
0
0
003aad113
T_j = 175 °C
T_j = 25 °C
1
2
3 _{VGS (V)} 4
003aad114
100
I_S
(A)
80
60
T_j = 175 °C
40
20
T_j = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
V_SD (V)
Fig 12. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
10^-6
0
1
2 V_GS (V) 3
0
-6 0
0
60
120
180
Tj (°C)
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
Fig 15. Gate-source threshold voltage as a function of
junction temperature
PSMN1R7-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
© NXP B.V. 2010. All rights reserved.
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