PSMN1R7-30YL_10 Datasheet, PDF (8/16 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
200
g_fs
(S)
150
003aac452
100
50
0
0
20
40
60 _{ID (A)} 80
003aac453
80
I_D
(A)
60
40
20
0
0
T_j = 150 °C
25 °C
1
2
3 _{VGS (V)} 4
Fig 8. Forward transconductance as a function of
drain current; typical values
8000
C
C_iss
(pF)
6000
003aac455
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
3.0
R_DSon
(mΩ)
2.5
003aac451
4000
2.0
C_rss
2000
1.5
0
2
4
6
8
10
V_GS (V)
1.0
2
4
6
8 _{VGS (V)} 10
Fig 10. Input and reverse transfer capacitances as a
Fig 11. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN1R7-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
© NXP B.V. 2010. All rights reserved.
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