PSMN1R7-30YL_10 Datasheet, PDF (10/16 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 16. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aac448
10
V_GS
(V)
8
6
V_DS = 12 (V)
V_DS = 19 (V)
4
2
Fig 17. Gate charge waveform definitions
6000
C_iss
C
(pF)
C_oss
4000
003aac454
2000
C_rss
0
0
20
40
60 _{QG (nC)} 80
0
10^-1
1
10 V_DS (V) 10²
Fig 18. Gate-source voltage as a function of gate
charge; typical values
Fig 19. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN1R7-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
© NXP B.V. 2010. All rights reserved.
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