PSMN1R7-30YL_10 Datasheet, PDF (7/16 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
Conditions
V_DS = 12 V; R_L = 0.5 Ω; V_GS = 4.5 V;
R_G(ext) = 4.7 Ω
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 20
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 20 V
Min Typ Max Unit
-
46
-
ns
-
72 -
ns
-
76
-
ns
-
34 -
ns
-
0.78 1.2 V
-
45
-
ns
-
56
-
nC
300
I_D
(A)
250
4
10 3.6
3.4
200
150
100
50
0
0
2
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V_GS (V) = 3.2
3
2.8
2.6
2.4
2.2
4
6
8
10
V_DS (V)
5
R_DSon
(mΩ)
4
3
2
1
0
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V_GS (V) = 3.4
3.6
4
7
10
50
100
150
200
250
I_D (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
PSMN1R7-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
© NXP B.V. 2010. All rights reserved.
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