PSMN1R7-30YL_10 Datasheet, PDF (2/16 Pages) NXP Semiconductors – N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Q_G(tot)
total gate charge
Avalanche ruggedness
V_GS = 4.5 V; I_D = 10 A;
V_DS = 12 V; see Figure 17
E_DS(AL)R
repetitive
see Figure 3
drain-source
avalanche energy
Min Typ Max Unit
-
36.2 -
nC
[2][3][4] _-
-
-
J
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN1R7-30YL
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN1R7-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
© NXP B.V. 2010. All rights reserved.
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