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| PMEG2005ELD Datasheet, PDF (9/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current | |||
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NXP Semiconductors
8. Test information
PMEG2005ELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
RS = 50 Ω
V = VR + IF Ã RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
(1) IR = 1 mA
Fig 14. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 15. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 10, 11, 12 and 13 are
calculated according to the equations: IF(AV) = IM à δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM à δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG2005ELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 4 May 2011
© NXP B.V. 2011. All rights reserved.
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