PMEG2005ELD Datasheet, PDF (3/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current

NXP Semiconductors
PMEG2005ELD
20 V, 0.5 A low V_F MEGA Schottky barrier rectifier
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
V_R
I_F(AV)
I_FRM
I_FSM
P_tot
T_j
T_amb
T_stg
reverse voltage
average forward current square wave; δ = 0.5;
f = 20 kHz
repetitive peak forward
current
T_amb ≤ 85 °C
T_sp ≤ 130 °C
t_p ≤ 1 ms; δ ≤ 0.25
non-repetitive peak
forward current
square wave; t_p = 8 ms
total power dissipation T_amb ≤ 25 °C
junction temperature
ambient temperature
storage temperature
-
[1] _-
-
-
[2] _-
[3] _-
[1] _-
[4] _-
-
−55
−65
20
V
0.5
A
0.5
A
2.5
A
3
A
340
mW
660
mW
1000 mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[2] T_j = 25 °C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PMEG2005ELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 May 2011
© NXP B.V. 2011. All rights reserved.
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