PMEG2005ELD Datasheet, PDF (4/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current

NXP Semiconductors
PMEG2005ELD
20 V, 0.5 A low V_F MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
R_th(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1][2] _-
-
370 K/W
[1][3] _-
-
190 K/W
[1][4] _-
-
125 K/W
[5] _-
-
50 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[5] Soldering point of cathode tab.
10³
Z_th(j-a)
(K/W)
10²
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
006aac569
0
0.02
0.01
10
10^–3
10^–2
10^–1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2005ELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 May 2011
© NXP B.V. 2011. All rights reserved.
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