PMEG2005ELD Datasheet, PDF (6/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current

NXP Semiconductors
PMEG2005ELD
20 V, 0.5 A low V_F MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
V_F
forward voltage
[1]
I_F = 0.1 mA
-
115
180
I_F = 1 mA
-
175
240
I_F = 10 mA
-
240
290
I_F = 100 mA
-
320
380
I_F = 500 mA
-
450
500
I_R
reverse current
V_R = 10 V
-
5
30
C_d
diode capacitance V_R = 1 V; f = 1 MHz
-
t_rr
reverse recovery
[2] _-
time
24
30
7
-
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
[2] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Unit
mV
mV
mV
mV
mV
μA
pF
ns
10
I_F
(A)
1
10^–1
10^–2
(1)
(2)
(3) (4) (5)
006aac572
10^–3
10^–4
0
0.2
0.4
0.6
0.8
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 5. Forward current as a function of forward
voltage; typical values
10^–2
I_R
(A)
10^–3
10^–4
10^–5
10^–6
10^–7
10^–8
10^–9
0
(1)
(2)
(3)
(4)
5
10
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
006aac573
15
20
V_R (V)
Fig 6. Reverse current as a function of reverse
voltage; typical values
PMEG2005ELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 May 2011
© NXP B.V. 2011. All rights reserved.
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