PMEG2005ELD Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current

NXP Semiconductors
PMEG2005ELD
20 V, 0.5 A low V_F MEGA Schottky barrier rectifier
50
C_d
(pF)
40
006aac574
30
20
10
0
0
5
10
15
20
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig 7. Diode capacitance as a function of reverse voltage; typical values
0.4
P_F(AV)
(W)
0.3
0.2
(2)
(1)
006aac575
(4)
(3)
0.100
P_R(AV)
(W)
0.075
0.050
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(2)
(3)
(1)
0.1
0.025
(4)
0.0
0.00
0.25
0.50
0.75
I_F(AV) (A)
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 8.
Average forward power dissipation as a
function of average forward current; typical
values
0.000
0
5
10
15
20
V_R (V)
T_j = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 9. Average reverse power dissipation as a
function of reverse voltage; typical values
PMEG2005ELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 May 2011
© NXP B.V. 2011. All rights reserved.
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