PMD4001K Datasheet, PDF (9/15 Pages) NXP Semiconductors – Low VCEsat (BISS) transistors

NXP Semiconductors
PMD4001K
MOSFET driver
1
V_CEsat
(V)
10^−1
(1)
(2)
(3)
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1
V_CEsat
(V)
10^{−1 (1)}
(2)
(3)
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10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
8. Test information
10^−2
10^−1
1
10
10²
10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
V_CC
(probe)
oscilloscope
C1
450 Ω
R2
V_I
R1
RC
V_O
(probe)
oscilloscope
3 kΩ
TR1
DUT
D1
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I_C = 0.05 A; I_B = 2.5 mA; R1 = 50 Ω; R2 = 3 kΩ; R_C = 180 Ω; C1 = 1 nF
Fig 11. Test circuit for switching times
PMD4001K_1
Product data sheet
Rev. 01 — 3 November 2006
© NXP B.V. 2006. All rights reserved.
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