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PMD4001K Datasheet, PDF (7/15 Pages) NXP Semiconductors – Low VCEsat (BISS) transistors
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NXP Semiconductors
PMD4001K
MOSFET driver
7. Characteristics
Table 7. Characteristics
Symbol Parameter
Conditions
NPN transistor
ICBO
hFE
VCEsat
VBEsat
VBE
Diode
collector-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
base-emitter voltage
VCB = 40 V; IE = 0 A
VCB = 40 V; IE = 0 A;
Tj = 150 °C
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 100 mA
VCE = 5 V; IC = 200 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 200 mA; IB = 20 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 200 mA; IB = 20 mA
VCE = 5 V; IC = 2 mA
VF
forward voltage
Device
IF = −200 mA
td
delay time
IC = 0.05 A; IB = 2.5 mA
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
Device with optional capacitor C1
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
IC = 0.05 A; IB = 2.5 mA;
C1 = 1 nF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min
-
-
200
95
24
-
-
-
-
-
-
-
[1] -
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
-
15 nA
-
5
µA
290 450
160 -
35 -
90 250 mV
200 400 mV
340 500 mV
0.7 -
V
0.9 -
V
1
1.2 V
660 -
mV
-
−1.1 V
6
-
ns
70 -
ns
76 -
ns
1160 -
ns
284 -
ns
1444 -
ns
3
-
ns
14 -
ns
17 -
ns
219 -
ns
179 -
ns
398 -
ns
PMD4001K_1
Product data sheet
Rev. 01 — 3 November 2006
© NXP B.V. 2006. All rights reserved.
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