PMD4001K Datasheet, PDF (3/15 Pages) NXP Semiconductors – Low VCEsat (BISS) transistors

NXP Semiconductors
PMD4001K
MOSFET driver
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
NPN transistor
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_B
base current
-
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
Diode
I_F
forward current
-
I_FRM
repetitive peak forward
t_p ≤ 1 ms; δ = 0.25
-
current
I_FSM
non-repetitive peak forward square wave
current
t_p ≤ 1 µs
-
t_p ≤ 100 µs
-
t_p ≤ 10 ms
-
Device
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
40
V
40
V
0.1
A
0.2
A
0.1
A
0.2
A
230
mW
300
mW
375
mW
−0.2 A
−0.6 A
−9
A
−3
A
−1.7 A
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PMD4001K_1
Product data sheet
Rev. 01 — 3 November 2006
© NXP B.V. 2006. All rights reserved.
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