PMD4001K Datasheet, PDF (8/15 Pages) NXP Semiconductors – Low VCEsat (BISS) transistors

NXP Semiconductors
PMD4001K
MOSFET driver
500
h_FE
400
(2)
300
200 ⁽¹⁾
(3) (4) (5)
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100
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
(4) T_amb = 125 °C
(5) T_amb = 150 °C
Fig 5. DC current gain as a function of collector
current; typical values
1.1
V_BE
(V)
0.9
(1)
0.7
(2)
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0.5
(3)
0.20
I_C
(A)
0.16
I_B (mA) = 5
4.5
4
3.5
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0.12
0.08
3
2.5
2
1.5
0.04
1
0.5
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
1.0
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0.8
(1)
(2)
0.6
(3)
0.4
0.3
10^−2
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
0.2
10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
PMD4001K_1
Product data sheet
Rev. 01 — 3 November 2006
© NXP B.V. 2006. All rights reserved.
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