PMD4001K Datasheet, PDF (1/15 Pages) NXP Semiconductors – Low VCEsat (BISS) transistors

PMD4001K
MOSFET driver
Rev. 01 — 3 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN transistor and high-speed switching diode to protect the base-emitter junction in
reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I General-purpose transistor and high-speed switching diode as driver
I High-speed switching diode to protect the base-emitter junction
I Application-optimized pinout
I Internal connections to minimize layout effort
I Space-saving solution
I Reduces component count
1.3 Applications
I Power MOSFET driver
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
NPN transistor
V_CEO
I_C
I_CM
Diode
collector-emitter voltage
collector current
peak collector current
open base
single pulse;
t_p ≤ 1 ms
-
-
40
V
-
-
0.1 A
-
-
0.2 A
I_F
forward current
V_F
forward voltage
-
-
−0.2 A
I_F = −200 mA ^[1] -
-
−1.1 V
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.