BUK761R8-30C Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
4
R_DSon
(mΩ)
3
2
003aab360
2
a
1.5
1
0.5
03aa27
1
0
5
10
T _j = 25 °C; I_D = 25 A
15
20
V_GS (V)
0
-60
0
60
a=
R _{DS o n}
R _{DS o n(25°C )}
120 _{Tj (°C)} 180
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
6
4
003aab347
V_DS = 14 V
V_DS = 24 V
12000
C
(pF)
8000
4000
C_iss
C_oss
003aab345
2
C_rss
0
0
50
100 _{QG (nC)} 150
0
10^-1
1
10 _{VDS (V)} 10²
T _j = 25 °C; I_D = 25 A
V_GS = 0 V ; f = 1 M H z
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK761R8-30C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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