BUK761R8-30C Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
Table 6.
Symbol
t_f
L_D
L_S
Characteristics …continued
Parameter
Conditions
fall time
internal drain
inductance
V_DS = 25 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G(ext) = 10 Ω
from upper edge of drain
mounting base to center of die
internal source
inductance
from source lead to source
bonding pad
Min
Typ
Max
Unit
-
134
-
ns
-
2.5
-
nH
-
7.5
-
nH
300
I_D
20
(A)
7
6
200
003aab341
5.5
V_GS (V) = 5
100
4.5
4
0
0
2
4
6
8 _{VDS (V)10}
T _j = 25 °C
8
R_DSon
(mΩ)
6
V_GS (V) = 5
003aab361
5.5
4
2
0
0
100
T _j = 25 °C
7
15 20
200 _{ID (A)} 300
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
BUK761R8-30C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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