BUK761R8-30C Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,
using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
„ 175 °C rated
„ Standard level compatible
„ Q101 compliant
„ TrenchMOS technology
1.3 Applications
„ 12 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1 and 4
[1][2] _-
-
100 A
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
-
-
333 W
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12 and
13
-
1.5 1.8 mΩ
Avalanche ruggedness
E_DS(AL)S non-repetitive
I_D = 100 A; V_sup ≤ 30 V;
drain-source avalanche R_GS = 50 Ω; V_GS = 10 V;
energy
T_j(init) = 25 °C
-
-
1.7 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.