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| BUK761R8-30C Datasheet, PDF (4/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
103
003aab373
IAL
(A)
102
(1)
(2)
10
(3)
1
10-3
10-2
10-1
1 tAL (ms) 10
(1) SingleÃpulse; Tmb = 25 °C.
(2) SingleÃpulse; Tmb = 150 °C.
(3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
Limit RDSon = VDS / ID
103
003aab339
tp = 10 μs
102
(1)
100 μs
10
1
10-1
DC
1 ms
10 ms
100 ms
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse
(1) Capped at 100 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK761R8-30C_2
Product data sheet
Rev. 02 â 20 August 2007
© NXP B.V. 2007. All rights reserved.
4 of 15
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