BUK761R8-30C Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
180
003aab344
g_fs
(S)
120
BUK761R8-30C
N-channel TrenchMOS standard level FET
300
I_D
(A)
200
003aab346
60
100
Tj = 175 °C
Tj = 25 °C
0
0
20
40
T _j = 25 °C; V_DS = 25 V
60 _{ID (A)} 80
0
0
2
4
6 _{VGS (V)} 8
V_DS = 25 V
Fig 8. Forward transconductance as a function of
drain current; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
10^−3
10^−4
10^−5
10^−6
0
2
T _j = 25 °C; V_DS = V_GS
4
6
V_GS (V)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
5
V_GS(th)
(V)
4
max
03aa32
3
typ
2
min
1
0
−60
0
60
I_D = 1 m A; V_DS = V_GS
120
180
T_j (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
BUK761R8-30C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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