BUK7108-40AIE Datasheet, PDF (9/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
03nn73
03nn76
80
5000
gfs
C
(S)
(pF)
60
3750
Ciss
40
2500
Crss
Coss
20
1250
0
0
25
50
75 _{ID (A)} 100
0
10-1
1
10 _{VDS (V)} 102
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7108-40AIE_3
Product data sheet
Rev. 03 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
9 of 15