BUK7108-40AIE Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
L_D
internal drain
inductance
L_S
internal source
inductance
Source-drain diode
from upper edge of drain mounting base to
centre of die; T_j = 25 °C
from source lead to source bond pad;
T_j = 25 °C; lead length 6 mm
V_SD
source-drain voltage I_S = 40 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
55
-
ns
-
30
-
nC
BUK7108-40AIE_3
Product data sheet
Rev. 03 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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