BUK7108-40AIE Datasheet, PDF (10/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
100
ID
(A)
75
50
25
0
0
03nn74
175 °C
Tj = 25 °C
2
4
6 _{VGS (V)} 8
10
VGS
(V)
8
6
4
2
0
0
03nn77
VDS = 14 V
32 V
25
50
75
100
QG (nC)
Fig 13. Transfer characteristics: drain current as a
Fig 14. Gate-source voltage as a function of charge;
function of gate-source voltage; typical values
typical values
600
ID/Isense
550
500
450
03nn79
6
RD(Is)on
(Ω)
4
2
03nn78
400
4
8
12
16 _{VGS (V)} 20
Fig 15. Drain-sense current ratio as a functionof
gate-source voltage; typical values
0
4
8
12
16 _{VGS (V)} 20
I_sense = 25mA
Fig 16. Drain-sense current on-state resistance as a
function of gate-source voltage; typical values
BUK7108-40AIE_3
Product data sheet
Rev. 03 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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