BUK7108-40AIE Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
400
ID
10
9
(A)
20
300
200
100
0
0
2
4
03nn70
Label is VGS (V)
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
16
RDSon
(Ω)
12
03nn72
8
4
0
4
8
12
16 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
16
03nn71
5.5 _{6 6.5}
Label is VGS (V)
7 _{7.5 8}
12
10
8
20
2.0
a
1.6
1.2
0.8
0.4
03ni30
4
0
100
200
300 _{ID (A)} 400
0
−60
0
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7108-40AIE_3
Product data sheet
Rev. 03 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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