BUK7108-40AIE Datasheet, PDF (4/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
120
P_der
(%)
80
40
03na19
120
ID
(A)
80
Capped at 75 A due to package
40
03ni93
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS / ID
102
Capped at 75 A due to package
10
0
0
50
100
150
200
Tmb (°C)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
03nl55
tp = 10 μ s
100 μ s
1 ms
DC
10 ms
100 ms
1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7108-40AIE_3
Product data sheet
Rev. 03 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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