PSMN5R6-100PS Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET

NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET
10
V_GS
(V)
8
6
4
2
0
0
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V_DS = 20 V
V_DS = 50 V
40
80
120
160
Q_G (nC)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Gate-source voltage as a function of gate
charge; typical values
10⁵
C
(pF)
10⁴
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C_iss
10³
10²
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 14. Gate charge waveform definitions
16000
C
(pF)
12000
8000
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C_iss
C_rss
4000
0
0
4
8
12
V_GS (V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN5R6-100PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
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