PSMN5R6-100PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET

NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET
160
I_D
(A)
120
80
6
5.5 5
8
10
003aad685
4.5
40
V_GS (V) = 4
0
0
0.5
1
1.5
2
V_DS (V)
250
g_fs
(S)
200
003aad692
150
100
50
0
0
20
40
60
80
100
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
160
I_D
(A)
120
80
003aad687
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
40
T_j = 175 °C
T_j = 25 °C
10^−5
0
0
2
4
6
V_GS (V)
10^−6
0
2
4
6
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
PSMN5R6-100PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
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