PSMN5R6-100PS Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET

NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
3.2
a
2.4
003aad774
1.6
0.8
0
-60
0
60
120
180
T_j (°C)
Fig 9. Gate-source threshold voltage as a function of _{Fig 10. Normalized drain-source on-state resistance}
junction temperature
factor as a function of junction temperature
10
R_DSon
(mΩ)
8
003aad688
10
R_DSon
(mΩ)
8
V_GS (V) = 4.5
003aad689
6
6
5
4
5.5 ⁶
4
8 10 15
2
0
4
8
12
16
20
V_GS (V)
2
0
20
40
60
80 _{ID (A)} 100
Fig 11. Drain-source on-state resistance as a function Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
of drain current; typical values
PSMN5R6-100PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
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