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| PSMN5R6-100PS Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 m⦠standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS= VGS; Tj = 25 °C;
see Figure 8 and 9
ID = 1 mA; VDS= VGS; Tj = 175 °C;
see Figure 9
ID = 1 mA; VDS= VGS; Tj = -55 °C;
see Figure 9
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
f = 1 MHz
ID = 80 A; VDS = 50 V; VGS = 10 V;
see Figure 13 and 14
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15 and 16
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15 and 16
VDS = 50 V; RL = 0.6 â¦; VGS = 10 V;
RG(ext) = 1.5 â¦
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V
Min Typ Max Unit
100 -
-
V
90
-
-
V
2
3
4
V
1
-
-
V
-
-
4.6 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
-
15.7 mâ¦
-
4.3 5.6 mâ¦
-
0.97 -
â¦
-
141 -
nC
-
36
-
nC
-
43
-
nC
-
8061 -
pF
-
561 -
pF
-
330 -
pF
-
31
-
ns
-
46
-
ns
-
83
-
ns
-
34
-
ns
-
0.79 1.2 V
-
67
-
ns
-
182 -
nC
PSMN5R6-100PS_1
Product data sheet
Rev. 01 â 23 November 2009
© NXP B.V. 2009. All rights reserved.
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