PSMN5R6-100PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET

NXP Semiconductors
150
I_D
(A)
(1)
100
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PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET
120
P_der
(%)
80
03aa16
50
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
Limit R_DSon = V_DS / I_D
10²
DC
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
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10 μs
100 μs
1 ms
10 ms
100 ms
10^−1
1
10
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN5R6-100PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
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