PSMN3R4-30PL Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 3.4 m logic level MOSFET

NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
003aad420
160
g_fs
(S)
120
80
40
0
0
20
40
60
80
100
I_D (A)
12
R_DSon
(mΩ)
9
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6
3
0
0
5
10
15
20
V_GS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
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100
I_D
(A)
80
60
40
20
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3 _{VGS (V)} 4
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 9. Transfer characteristics: drain current as a
Fig 10. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
PSMN3R4-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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