PSMN3R4-30PL Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 30 V 3.4 m logic level MOSFET

NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
I_DM
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1
pulsed; t_p ≤ 10 µs; T_mb = 25 °C;
see Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped
Min
-
-
-20
[1] _-
[1] _-
-
-
-55
-55
[1] _-
-
-
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
100 A
100 A
609 A
114 W
175 °C
175 °C
100 A
609 A
200 mJ
200
I_D
(A)
150
(1)
100
50
003aad359
120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R4-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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