PSMN3R4-30PL Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 3.4 m logic level MOSFET

PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
Rev. 01 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
30 V
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; ^[1] -
-
100 A
see Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
-
-
114 W
dissipation
T_j
junction temperature
Static characteristics
-55 -
175 °C
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 10 A;
resistance
T_j = 25 °C; see Figure 13
V_GS = 10 V; I_D = 10 A;
T_j = 25 °C; see Figure 13
Dynamic characteristics
-
[2] _-
3.5 4.1 mΩ
2.8 3.4 mΩ
Q_GD
Q_G(tot)
gate-drain charge V_GS = 4.5 V; I_D = 25 A;
-
8-
nC
total gate charge
V_DS = 15 V; see Figure 14;
-
31 -
nC
see Figure 15
Avalanche ruggedness
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C;
-
-
200 mJ
drain-source
I_D = 100 A; V_sup ≤ 30 V;
avalanche energy R_GS = 50 Ω; unclamped