PSMN075-100MSE Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications

NXP Semiconductors
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
5
V_GS(th) (V)
4
Max
003aak573
10^{- 1}
I_D
(A)
10^{- 2}
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min typ max
3
Typ
2
Min
1
10^{- 3}
10^{- 4}
10^{- 5}
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
160
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3
R_DSon
4.5 V 5 V
5.5 V
6V
a
140
2.4
003aaj323
120
1.8
100
6.5 V
1.2
80
60
7 V 8 V 10 V
40
0
4
8
12
16
20
I_D (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0.6
0
-60
0
60
120
180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
© NXP B.V. 2013. All rights reserved
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