PSMN075-100MSE Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications

NXP Semiconductors
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
Symbol
Q_G(tot)
Parameter
total gate charge
Avalanche Ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
V_GS = 10 V; I_D = 5 A; V_DS = 50 V;
T_j = 25 °C; Fig. 14; Fig. 15
V_GS = 10 V; T_j(init) = 25 °C; I_D = 18 A;
V_sup ≤ 100 V; R_GS = 50 Ω; unclamped;
Fig. 3
Min Typ Max Unit
-
16.4 -
nC
-
-
25
mJ
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN075-100MSE LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 4
leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN075-100MSE
Marking code
M75E10
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
drain-source voltage
drain-gate voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
Min Max Unit
-
100 V
-
100 V
© NXP B.V. 2013. All rights reserved
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