PSMN075-100MSE Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications

PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33
designed specifically for PoE applications
26 March 2013
Product data sheet
1. General description
New standards and proprietary approaches are enabling the next generation of Power-
over-Ethernet (PoE) systems capable of delivering up to 100W to each powered
device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom
CCTV cameras, for example, are placing increased demands on the power sourcing
equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal
management and power density. Part of NXP’s “NextPower Live” MOSFET portfolio,
the PSMN075-100MSE has been designed specifically to compliment the latest PoE
controllers, offering both superior linear mode operation and very low R_DS(on) in a cost-
effective, industry compatible, LFPAK33 package.
2. Features and benefits
• Enhanced forward biased safe operating area for superior linear mode operation
• Low Rdson for low conduction losses
• Ultra reliable LFPAK33 package – no glue, no wires, 175°C
• Very low I_DSS
3. Applications
• IEEE802.3at and proprietary solutions - (type 2)
• Suitable for PoE applications upto 30W
• Use PSMN040-100MSE for higher power requirements
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_j = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 5 A; T_j = 25 °C; Fig. 12
resistance
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 5 A; V_DS = 50 V;
T_j 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
-
-
100 V
-
-
18
A
-
-
65
W
-
57
71
mΩ
-
5.3 -
nC
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