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| PSMN075-100MSE Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications | |||
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NXP Semiconductors
10
Zth(j-mb)
(K/W)
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
003aak717
1 δ = 0.5
0.2
0.1
0.05
10-1
0.02
single shot
P
tp
δ= T
10-2
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 100 °C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
gate resistance
f = 10 MHz
Min Typ Max Unit
100 -
-
V
90
-
-
V
2.3 3.3 4
V
1
-
-
V
-
-
4.6 V
-
0.01 1
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
-
57
71
mΩ
-
-
128 mΩ
-
-
192 mΩ
-
1.55 -
Ω
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
© NXP B.V. 2013. All rights reserved
5 / 13
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