PSMN057-200P_11 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
10^−1
l_D
(A)
10^−2
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10^−3
10^−4
minimum
typical maximum
10^−5
10^−6
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
16
V_GS
(V)
12
8
4
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V_DD = 40 V
V_DD = 160 V
10⁴
C
(pF)
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C_iss
10³
C_oss
10²
10^−1
1
C_rss
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
40
I_F
(A)
30
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20
T_j = 175 °C
T_j = 25 °C
10
0
0
40
80
120
160
Q_G (nC)
T_j = 25 °C; I_D = 39 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0
0
0.4
0.8
1.2
V_SDS (V)
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PSMN057-200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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