PSMN057-200P_11 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
50
I_D
(A)
40
30
V_GS (V) = 10
8
003aae618
6
5.2
5
0.14
R_DS(on)
(Ω)
4.2 4.4 4.6
0.10
4.8
003aae619
20
4.8
10
0
0
4.6
4.4
4.2
0.4
0.8
1.2
1.6
2
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
0.06
5
5.2
6
V_GS (V) = 10
0.02
0
10
20
30
40
50
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
40
I_D
(A)
30
003aae620
20
10
T_j = 175 °C
T_j = 25 °C
0
0
2
4
6
V_GS (V)
V_DS > I_D x R_DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
50
g_fs
(S)
40
30
003aae621
T_j = 25 °C
T_j = 175 °C
20
10
0
0
10
20
30
40
I_D (A)
V_DS > I_D x R_DSon
Fig 9. Forward transconductance as a function of
drain current; typical values
2.9
a
2.1
1.3
003aae622
5
V_GS(th)
(V)
4
3
2
1
maximum
typical
minimum
003aae623
0.5
−60
20
100
180
T_j (°C)
0
−60
20
I_D = 1 mA; V_DS = V_GS
100
180
T_j (°C)
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN057-200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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