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PSMN057-200P_11 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
in free air
Min Typ Max Unit
-
-
0.6 K/W
-
60 -
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10−1 0.2
0.1
0.05
0.02
10−2
003aae617
P
tp
δ=
T
single pulse
10−3
10−6
10−5
10−4
10−3
tp
t
T
10−2
10−1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN057-200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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