 English |
|
|
|
|
|
|
|
| PSMN057-200P_11 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
Tmb = 100 °C
Tmb = 25 °C
pulsed; Tmb = 25 °C
Tmb = 25 °C
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; Tmb = 25 °C
EDS(AL)S
IAS
non-repetitive drain-source avalanche
energy
non-repetitive avalanche current
VGS = 10 V; Tj(init) = 25 °C; ID = 35 A;
Vsup ⤠50 V; unclamped; tp = 100 µs;
RGS = 50 â¦
Vsup ⤠50 V; VGS = 10 V;
Tj(init) = 25 °C; RGS = 50 â¦; unclamped
Min Max Unit
-
200 V
-
200 V
-20 20 V
-
27.5 A
-
39 A
-
156 A
-
250 W
-55 175 °C
-55 175 °C
-
39 A
-
156 A
-
300 mJ
-
35 A
100
Pder
(%)
80
60
40
20
0
0
003aae614
50
100
150
200
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0
003aae615
50
100
150
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
PSMN057-200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 4 January 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese