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PSMN057-200P_11 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
VDS = 200 V; VGS = 0 V; Tj = 25 °C
VDS = 200 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 17 A; Tj = 175 °C
VGS = 10 V; ID = 17 A; Tj = 25 °C
ID = 39 A; VDS = 160 V; VGS = 10 V;
Tj = 25 °C
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
VDS = 100 V; RL = 2.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
measured from drain lead to centre of
die ; Tj = 25 °C
measured from tab to centre of die ;
Tj = 25 °C
measured from source lead to source
bond pad ; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
178 -
-
V
200 -
-
V
-
-
6
V
1
-
-
V
2
3
4
V
-
0.03 10 µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
-
165 mΩ
-
41
57
mΩ
-
96
-
nC
-
13
-
nC
-
37
50
nC
-
3750 -
pF
-
385 -
pF
-
180 -
pF
-
18
-
ns
-
58 -
ns
-
105 -
ns
-
78
-
ns
-
4.5 -
nH
-
3.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
133 -
ns
-
895 -
nC
PSMN057-200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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