PSMN016-100YS Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100 V 16 mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
60
RDSon
4.0
(mΩ)
50
40
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VGS (V) = 4.5
30
20
5.0
10
0
10
20
40
60
ID (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
6
4
VDS = 50 V
20 V
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80 V
10⁴
C
(pF)
10³
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Ciss
2
0
0
20
40
60
QG (nC)
10²
10^-1
1
Coss
Crss
10
10²
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN016-100YS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 January 2010
© NXP B.V. 2010. All rights reserved.
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