PSMN016-100YS Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 100 V 16 mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 15 A;
T_j = 100 °C; see Figure 12
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 13
Min Typ Max Unit
-
-
28.8 mΩ
-
13.6 16 mΩ
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN016-100YS LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
SOT669
PSMN016-100YS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 January 2010
© NXP B.V. 2010. All rights reserved.
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