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PSMN016-100YS Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
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NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11 and 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 30 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 15
ID = 30 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 30 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 15
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 15
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 16
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 50 V; RL = 1.7 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
Min Typ Max Unit
90
-
-
V
100 -
-
V
1
-
-
V
2
3
4
V
-
-
4.6 V
-
-
100 µA
-
0.06 2
µA
-
10
100 nA
-
10
100 nA
-
-
28.8 mΩ
-
-
44.8 mΩ
-
13.6 16
mΩ
-
0.6 -
Ω
-
42
-
nC
-
54
-
nC
-
11
-
nC
-
8
-
nC
-
3.2 -
nC
-
16
-
nC
-
4.2 -
V
-
2744 -
pF
-
205 -
pF
-
135 -
pF
-
19
-
ns
-
24
-
ns
-
47
-
ns
-
21
-
ns
PSMN016-100YS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 January 2010
© NXP B.V. 2010. All rights reserved.
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