PSMN016-100YS Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 100 V 16 mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 10 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 50 V
6000
C
(pF)
4000
2000
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Ciss
Crss
100
gfs
(S)
75
50
25
Min Typ Max Unit
-
0.8 1.2 V
-
56
-
ns
-
131 -
nC
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0
0
3
6
9
12
VGS (V)
0
0
10
20
30
40
50
ID (A)
Fig 5. Input and reverse transfer capacitances as a
Fig 6. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
80
RDSon
(mΩ)
60
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60
ID
(A)
40
10 6 5
4.7
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4.5
40
20
20
VGS (V) = 4
0
0
5
10
15
20
VGS (V)
0
0
1
2
VDS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN016-100YS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 January 2010
© NXP B.V. 2010. All rights reserved.
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