PSMN016-100YS Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 100 V 16 mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
10³
ID
(A)
10²
Limit R_DSon = V_DS / I_D
10
1
10^-1
1
DC
10
003aad881
t_p = 100 μs
100 μs
1 ms
10 ms
100 ms
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 1
junction to mounting
base
Min Typ Max Unit
-
0.54 1.28 K/W
60
ID
(A)
40
003aad880
20
0
0
50
100
150
200
Tmb (°C)
Fig 4. Continuous drain current as a function of mounting base temperature
PSMN016-100YS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 January 2010
© NXP B.V. 2010. All rights reserved.
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